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NASA Glenn SiC Electronics Research & Technology Report Article Index
  • Site-Competition Epitaxy Controls Doping of Silicon Carbide 1994. [HTML brief]

  • Performance-Limiting Micropipe Defects Identified in SiC Wafers 1994. [HTML brief]

  • Silicon Carbide Junction Field-Effect Transistors Developed 1994. [HTML brief]

  • Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized 1995. [HTML brief]

  • Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy 1995. [HTML brief]

  • Reliable Breakdown Obtained in Silicon Carbide Rectifiers 1996. [HTML brief]

  • Silicon Carbide Junction Field Effect Transistor Digital Logic Gates Demonstrated at 600 C 1997. [HTML brief]

  • Chemical Mechanical Polishing of Silicon Carbide 1997. [HTML brief]

  • Silicon Carbide Mixers Demonstrated to Improve the Interference Immunity of Radio-Based Aircraft Avionics 1997. [HTML brief]

  • Deep Etching Process Developed for the Fabrication of Silicon Carbide Microsystems 1999. [HTML brief]

  • Packaging Technology Developed for High-Temperature SiC Sensors and Electronics 1999. [HTML brief]

  • Temperature Distribution Within a Defect-Free Silicon Carbide Diode Predicted by a Computational Model 1999. [HTML brief]

  • Thermally Stable Ohmic Contacts on Silicon Carbide Developed for High-Temperature Sensors and Electronics 2000. [HTML brief]

  • Packaging Technology Developed for High-Temperature Silicon Carbide Microsystems 2000. [HTML brief]

  • Bulk Micromachined 6H-SiC High-g Piezoresistive Accelerometer Fabricated and Tested 2001. [HTML brief]

  • Advanced Packaging Technology Used in Fabricating a High-Temperature Silicon Carbide Pressure Sensor 2002. [HTML brief]

  • Packaging Technology Designed, Fabricated, and Assembled for High-Temperature SiC Microsystems 2002. [HTML brief]

  • Silicon Carbide Nanotube Synthesized 2002. [HTML brief]

  • Microsystems Fabrication Laboratory-New Class 100 Cleanroom Completed and Certified 2002. [HTML brief]

  • Improved Silicon Carbide Crystals Grown From Atomically Flat Surfaces 2002. [HTML brief]

  • Web Growth Used to Confine Screw Dislocations to Predetermined Lateral Positions in 4H-SiC Epilayers 2003. [HTML brief]

  • New Deep Reactive Ion Etching Process Developed for the Microfabrication of Silicon Carbide 2004. [HTML brief]

  • Packaged SiC Transistor Operated at 500 C for 2000 hr in Oxidizing Air Ambient 2005. [HTML brief]

  • Probabilistic Fracture Strength of High-Aspect-Ratio Silicon Carbide Microspecimens Predicted 2005. [HTML brief]

  • Nanometer Step Height Standard Chip Developed for Calibration of Scanning Probe Microscopy Instruments 2005. [HTML brief]

  • High-Temperature Amplifier Based on a Silicon Carbide Metal-Semiconductor Field Effect Transistor and Ceramic Packaging Designed, Fabricated, and Electrically Operated at 500 C 2006. [HTML brief]

  • Deep Reactive Ion Etching Process Optimized for Silicon Carbide Micromachining 2006. [HTML brief]

  • Silicon Carbide Integrated Circuit Fabricated and Electrically Operated for 2000 hr at 500 C 2007. [HTML brief]