Back to article3C silicon carbide films are shown on flattened mesas after thermal oxidation that reveals crystal defects. A top-view microscopic photograph of two square mesas (each with dimensions of 0.2 by 0.2 millimeters) is shown in the figure. The mesa on the left exhibits numerous dark line and triangle outlines that indicate the presence of stacking fault defects. The mesa on the right is featureless, indicating that it is free of stacking fault defects. The defect-free film shown on the right was made using step-free surface heteroepitaxy.
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