Return to articleAluminum nitride, 96-wt% aluminum oxide, and 90-wt% aluminum oxide prototype high-temperature microsystem packages developed for SiC microsystems composed of MEMS sensors and electronic devices. Gold thick-film material is used for ceramic (package) substrate metalization. The picture on left shows the inside structure of these packages. Inside the package, there are eight wirebond spots surrounding the die-attach site for electrical interconnection between the microsystem chip to the package. The picture on right shows the outside of the package after being sealed. Outside the package, eight electrical input/output interconnections are provided by four vertical gold thick-film metalization lines along each package sidewall for connecting the packaged chip to a circuit board.
Last updated: June 25, 2003
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