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Low-Temperature Chalcopyrite Thin-Film Solar Cells Developed for Space Photovoltaic Applications

The NASA Glenn Research Center is researching low-cost, highly efficient chalcopyrite thin-film solar cells on lightweight polymer substrates that will ultimately lower the mass-specific power (watts/kilograms) of the cells, allowing extra payload for missions in space as well as cost reduction. In addition, thin-film cells are anticipated to have greater resistance to radiation damage in space, enabling their use in a wide range of orbits and prolonging their lifetime. The flexibility of the substrate has the added benefit of enabling roll-to-roll processing.

Current methods for depositing ternary chalcopyrite (I-III-VI2) thin-film compounds often require multisource inorganic/organometallic precursors and high-temperature (>500 °C) processes, including toxic sulfurization or selenization steps. The high-temperature requirements are incompatible with existing space-grade polymer substrates, and the use of toxic gases is not environmentally friendly. To overcome these obstacles, Glenn and the Ohio Aerospace Institute (OAI) have developed single-source precursors for the thin-film deposition of chalcopyrite materials (ref. 1). The precursors have “built-in” I-III-VI stoichiometry with desirable thermophysical properties for low-temperature deposition.

chemical diagrams of single source precursor showing P, C, (S, Se), (Cu, Ag), and (Al, Ga, In) sites and of chalcopyrite (including CuInSe2, CuInS2, CuGaSe2, CyuGaS2, AgInSe2, etc.
Decomposition of single-source precursor to yield chalcopyrite compounds.

Aerosol-assisted chemical vapor deposition (AACVD) can easily be adapted to use liquid precursors in the deposition of large-area thin films. Single-source precursors have enabled the AACVD of single-phase (112)-oriented copper indium sulfide (CuInS2) thin films on glass substrates at under 400 °C and have showed promising potential for polymer substrates (refs. 2 and 3).

graph of current in milliamperes versus voltage in millivolts along with photograph
Light current-voltage characteristics of a chalcopyrite thin-film solar cell fabricated with CuInS2 deposited by AACVD using a single-source precursor.

The entire fabrication process for the chalcopyrite photovoltaic device was established at Glenn, and the CuInS2 thin-film solar cells on glass were constructed at Glenn, Oberlin College, and the Institute of Energy Conversion at the University of Delaware (ref. 3). The light current-voltage characteristics of the solar cell showed an open-circuit voltage over 400 mV and a short-circuit current over 7 mA/cm2; that is comparable to other AACVD-made, chalcopyrite thin-film solar cells using more than one source. The single-source precursors can provide a simple novel fabrication process for multijunction solar cells composed of several chalcopyrite compounds with different bandgaps.

References

  1. Banger, Kulbinder K., et al.: A New Facile Route for the Preparation of Single-Source Precursors for Bulk, Thin-Film and Nanocrystallite I-III-VI Semiconductors. Inorg. Chem., vol. 42, issue 24, 2003, pp. 7713-7715.
  2. Jin, Michael H., et al.: The Effect of Film Composition on the Texture and Grain Size of CuInS2 Prepared by Spray Pyrolysis. Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, vol. A, 2003, pp. 430-433.
  3. Jin, Michael H., et al.: Solar Cells Fabricated with CuInS2 Films Deposited Using Single-Source Precursors. Proceedings of the 19th European Photovoltaic Solar Energy Conference, 4AV.1.71, 2004.

Find out more about this research.

Glenn contact: Dr. Aloysius F. Hepp, 216-433-3835, Aloysius.F.Hepp@nasa.gov
Ohio Aerospace Institute (OAI) contact: Dr. Michael H.-C. Jin, 216-433-3540, Michael.H.Jin@grc.nasa.gov
Authors: Dr. Michael H.-C. Jin, Dr. Kulbinder K. Banger, Jeremiah S. McNatt, Dr. John E. Dickman, and Dr. Aloysius F. Hepp
Headquarters program office: Exploration Systems
Programs/Projects: ESR&T


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Last updated: July 20, 2005 10:46 AM


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