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Long description of figure

Diagram of structure layers with thicknesses, showing (top to bottom) 5-nanometer Si cap, 10-nanometer Si0.70Ge0.30 layer, Sb4 deposition, 5-nanometer Si0.70Ge0.30 spacer layer, 10-nanometer Si channel, 600-nanometer Si0.70Ge0.30, 5000-nanometer linear gradient from Si0.70Ge0.30 to Si, 50-nanometer Si (MBE grown), 100-nanometer Si (after oxide etch), and sapphire substrate.

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Last updated: October 5, 2004

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